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STI20N60M2-EP Trans MOSFET Integrated Circuit Switch

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Shenzhen Weitaixu Capacitor Co.,Ltd

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STI20N60M2-EP Trans MOSFET Integrated Circuit Switch

Name: STI20N60M2EP Trans MOSFET Integrated Circuit Switch
Brand: ST Micro electronics
Price: 1 USD

Brand Name : ST Micro electronics

Model Number : STI20N60M2-EP

Certification : Original Part

Place of Origin : Shenzhen, China

MOQ : 1PCS

Price : to be Negotiated

Payment Terms : T/T, Western Union, Paypal, Wechat Pay

Supply Ability : 1 Million pieces per Month

Delivery Time : Immediate

Packaging Details : I2PAK

Packaging : I2PAK

Product Description : Power Field-Effect Transistors

Product Type : MOSFET N-CHANNEL 600V 13A TO220

Operating Temp Range : -55C to 150C

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STI20N60M2-EP Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) I2PAK Tube

Basic Parameters :

Extremely low gate charge.
Excellent output capacitance (COSS) profile.
Very low turn-off switching losses.
100% avalanche tested.
Zener-protected.

Absolute Maximum Ratings :

Switching applications.
Tailored for very high frequency converters (f > 150 kHz).

Description :

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Technical Specifications :

Tab	Tab
Package Width	4.83(Max)
Package Height	9.02(Max)
Package Length	10.67(Max)
PCB changed	3
Lead Shape	Through Hole
Mounting	Through Hole
Product Category	Power MOSFET
Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	110
Maximum Drain Source Resistance (mOhm)	8@10V
Typical Gate Charge @ Vgs (nC)	146(Max)@10V
Typical Gate Charge @ 10V (nC)	146(Max)
Typical Input Capacitance @ Vds (pF)	3247@25V
Maximum Power Dissipation (mW)	200000
Typical Fall Time (ns)	65
Typical Rise Time (ns)	101
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	14
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Packaging	Tube
Automotive	No
Supplier Package	TO-220AB
Standard Package Name	TO-220
Pin Count	3
Military	No

for product datasheet, CONTACT US directly.

Product Tags:

STI20N60M2-EP

N Channel MOSFET Transistor

STI20N60M2-EP Trans MOSFET Integrated Circuit Switch Images

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