STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3 PinTO-247 Tube

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STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3 PinTO-247 Tube

Name: STGWA60H65DFB Transistors IGBT Chip NCH 650V 80A 375000mW 3 PinTO247 Tube
Brand: STMicroelectronics
Price: 1 USD

Brand Name : STMicroelectronics

Model Number : STGWA60H65DFB

Certification : Original Part

Place of Origin : Shenzhen, China

MOQ : 1PCS

Price : to be Negotiated

Payment Terms : T/T, Western Union, Paypal, Wechat Pay

Supply Ability : 1 Million pieces per Month

Delivery Time : Immediate

Packaging Details : TO-247

Packaging : TO-247

Product Type : Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

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STGWA60H65DFB Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

General Description :

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE (sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Distinctive Characteristics :

Part No: STGWA60H65DFB

Description: Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

Collector Current (DC): 80(A)

Package Type: TO-247

Mounting: Through Hole

Collector-Emitter Voltage: 650(V)

Operating Temperature Classification: Military

Rad Hardened: No

Pin Count: 3 +Tab

Configuration: Single

Channel Type: N

Operating Temperature (Max): 175C

Gate to Emitter Voltage (Max): '±20(V)

Operating Temperature (Min): -55C

Packaging: Rail/Tube

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Product Tags:

computer ic chip

computer integrated chip

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