IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Name: IGT60R070D1ATMA1 Gan Power Transistors Industrial High Speed Transistor
Brand: Original brand
Price: 1 USD

China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor wholesale

Brand Name : Original brand

Model Number : IGT60R070D1ATMA1

Certification : Original

Place of Origin : Original

MOQ : 2000pcs

Price : Negotiation

Payment Terms : T/T

Supply Ability : 100000pcs

Delivery Time : 2-3days

Packaging Details : 2000/Reel

Package : PG-HSOF-8

Technology : GaN

Transistor Polarity : N-Channel

Channel Pattern : Enhancement

Product : MOSFET 600V CoolGaN Power Transistor

Pd-Power Dissipation : 125 W

Vds-Leakage source breakdown electric shock : 600V

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Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor

Feature

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)

Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI

Categories	Mosfet Power Transistor
Categories	IGT60R070D1ATMA1
Transistor Polarity	N-Channel
Channel No.	1 Channel
Leakage Source on-resistance	70 mOhms
Configure	Single
Pd-Power Dissipation	125 W
Vgs th-Gate Source threshold Voltage	0.9 V
Channel Pattern	Enhancement

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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Product Tags:

n channel power mosfet

high power transistor

IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor Images

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